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NJG1125PB5 - 1 - ver.2006-07-21 w-cdma triple lna gaas mmic q general description q package outline NJG1125PB5 is a triple band lna ic designed for w-cdma /umts cellular phone of 2.1g hz, 1.7ghz and 800mhz band. this ic has a lna pass-through function to select high gain mode or low gain mode. an ultra small and ultra thin package of ffp16?b5 is adopted. q features o low voltage operation +2.85v typ. o low ctl voltage operation +1.85v typ. o low current consumption 2.4ma typ. @high gain mode 0ua typ. @low gain mode o package ffp16-b5 (package size: 2.0 x 2.0 x 0.65mm typ.) [high gain mode] o high gain 17.0db typ. @f rf =2140mhz 16.5db typ. @f rf =885mhz 17.5db typ. @f rf =1860mhz o low noise figure 1.75db typ. @f rf =2140mhz 1.50db typ. @f rf =885mhz 1.65db typ. @f rf =1860mhz o high input ip3 0dbm typ. @ f rf =2140.0+2140.1mhz, pin=-30dbm -1dbm typ. @f rf =885.0+885.1mhz, pin=-30dbm +1dbm typ. @f rf =1860.0+1860.1mhz, pin=-30dbm [low gain mode] o gain -8.0db typ. @f rf =2140mhz -6.5db typ. @f rf =885mhz -9.0db typ. @f rf =1860mhz o high input ip3 +14dbm typ. @f rf =2140.0+2140.1mhz, pin=-16dbm +12dbm typ. @f rf =885.0+885.1mhz, pin=-20dbm +14dbm typ. @f rf =1860.0+1860.1mhz, pin=-16dbm q pin configuration ( to p view ) note: specifications and description listed in this catalog are subject to change without prior notice. pin connection 1. gnd 9. vctl2 (band sel.) 2. vinv 10. vctl1 (band sel.) 3. vctl3 (gain sel.) 11. gnd 4. rfout3 (1.7ghz) 12. rfin1 (800mhz) 5. gnd 13. gnd 6. rfout2 (2.1ghz) 14. rfin2 (2.1ghz) 7. gnd 15. gnd 8. rfout1 (800mhz) 16. rfin3 (1.7ghz) 6 7 8 10 11 12 13 14 15 123 rfin3 rfin2 gnd gnd rfout2 gnd gnd gnd vinv vc tl 1 vc tl 3 vc tl 2 logic circuit 4 9 rfout3 5 16 rfin1 rfout1 1.7ghz band bias circuit bias circuit bias circuit gnd 2.1ghz band 800mhz band 1 pin inde x NJG1125PB5
NJG1125PB5 - 2 - q absolute maximum ratings t a =+25c parameter symbol conditions ratings units operating voltage v dd 5.0 v inverter supply voltage v inv 5.0 v control voltage v ctl v ctl 1, 2, 3 5.0 v input power pin v dd =2.7v +15 dbm power dissipation p d at on pcb board 300 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+125 c q electrical characteristics 1 (dc) general conditions: v dd =v inv =2.85v, t a =+25c parameters symbol conditions min typ max units operating voltage v dd 2.7 2.85 3.6 v inverter supply voltage v inv 2.7 2.85 3.6 v control voltage1 (high) v ctl1(h) 1.52 1.85 v inv +0.3 v control voltage1 (low) v ctl1(l) 0 0 0.3 v control voltage 2 (high) v ctl2(h) 1.52 1.85 v inv +0.3 v control voltage 2 (low) v ctl2(l) 0 0 0.3 v control voltage 3 (high) v ctl3(h) 1.52 1.85 v inv +0.3 v control voltage 3 (low) v ctl3(l) 0 0 0.3 v operating current1 2.1ghz high gain mode i dd 1 v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v, rf off - 2.4 3.1 ma operating current2 800mhz high gain mode i dd 2 v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v, rf off - 2.4 3.1 ma operating current3 1.7ghz high gain mode i dd 3 v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v, rf off - 2.4 3.1 ma operating current4 low gain mode i dd 4 v ctl 3=0v, rf off - 0 5 ua inverter current1 i inv 1 v ctl 3=1.85v - 80 130 ua inverter current2 i inv 2 v ctl 3=0v - 45 80 ua control current1 i ctl 1 v ctl1 =1.85v - 3 10 ua control current2 i ctl 2 v ctl2 =1.85v - 3 10 ua control current3 i ctl 3 v ctl3 =1.85v - 3 10 ua
NJG1125PB5 - 3 - q electrical characteristics 2 (2.1ghz band high gain mode) general conditions: v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v, frf=2140mhz, t a =+25c, z s =z l =50ohm parameters symbol conditions min typ max units small signal gain1 gain1 exclude pcb & connector losses (in: 0.09db, out: 0.36db) 15.0 17.0 19.3 db noise figure1 nf1 exclude pcb & connector losses (in: 0.09db) - 1.75 2.00 db pin at 1db gain compression point1 p-1db(in)1 -16.0 -12.5 - dbm input 3rd order intercept point1 iip3_1 f1=frf, f2=frf+100khz, pin=-30dbm -6.0 0.0 - dbm rf input vswr1 vswri1 - 1.7 2.2 rf output vswr1 vswro1 - 1.8 2.3 q electrical characteristics 3 (2.1ghz band low gain mode) general conditions: v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v, frf=2140mhz, t a =+25c, z s =z l =50ohm parameters symbol conditions min typ max units small signal gain2 gain2 exclude pcb & connector losses (in: 0.09db, out: 0.36db) -11.0 -8.0 -6.0 db noise figure2 nf2 exclude pcb & connector losses (in: 0.09db) - 8.5 11.5 db pin at 1db gain compression point2 p-1db(in)2 +5.0 +12.0 - dbm input 3rd order intercept point2 iip3_2 f1=frf, f2=frf+100khz, pin=-16dbm 0.0 +14.0 - dbm rf input vswr2 vswri2 - 2.0 2.4 rf output vswr2 vswro2 - 1.5 2.0
NJG1125PB5 - 4 - q electrical characteristics 4 (800mhz band high gain mode) general conditions: v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v, frf=885mhz, t a =+25c, z s =z l =50ohm parameters symbol conditions min typ max units small signal gain3 gain3 exclude pcb & connector losses (in: 0.06db, out: 0.16db) 14.5 16.5 18.5 db noise figure3 nf3 exclude pcb & connector losses (in: 0.06db) - 1.50 1.70 db pin at 1db gain compression point3 p-1db(in)3 -16.0 -9.0 - dbm input 3rd order intercept point3 iip3_3 f1=frf, f2=frf+100khz, pin=30dbm -8.0 -1.0 - dbm rf input vswr3 vswri3 - 1.5 2.0 rf output vswr3 vswro3 - 1.5 2.1 q electrical characteristics 5 (800mhz band low gain mode) general conditions: v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v, frf=885mhz, t a =+25c, z s =z l =50ohm parameters symbol conditions min typ max units small signal gain4 gain4 exclude pcb & connector losses (in: 0.06db, out: 0.16db) -8.5 -6.5 -4.5 db noise figure4 nf4 exclude pcb & connector losses (in: 0.06db) - 6.5 9.5 db pin at 1db gain compression point4 p-1db(in)4 +3.5 +11.0 - dbm input 3rd order intercept point4 iip3_4 f1=frf, f2=frf+100khz, pin=-20dbm 0.0 +12.0 - dbm rf input vswr4 vswri4 - 2.0 2.5 rf output vswr4 vswro4 - 1.9 2.2
NJG1125PB5 - 5 - q electrical characteristics 6 (1.7ghz band high gain mode) general conditions: v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v, frf=1860mhz, t a =+25c, z s =z l =50ohm parameters symbol conditions min typ max units small signal gain5 gain 5 exclude pcb & connector losses (in: 0.10db, out: 0.31db) 15.5 17.5 19.0 db noise figure5 nf 5 exclude pcb & connector losses (in: 0.10db) - 1.65 1.80 db pin at 1db gain compression point5 p-1db(in)5 -16.0 -11.5 - dbm input 3rd order intercept point5 iip3_ 5 f1=frf, f2=frf+100khz, pin=-30dbm -6.0 +1.0 - dbm rf input vswr5 vswri 5 - 2.0 2.6 rf output vswr5 vswro 5 - 1.9 2.4 q electrical characteristics 6 (1.7ghz band low gain mode) general conditions: v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v, frf=1860mhz, t a =+25c, z s =z l =50ohm parameters symbol conditions min typ max units small signal gain6 gain 6 exclude pcb & connector losses (in: 0.10db, out: 0.31db) -11.5 -9.0 -7.0 db noise figure6 nf 6 exclude pcb & connector losses (in: 0.10db) - 9.5 12.0 db pin at 1db gain compression point6 p-1db(in)6 +4.0 +12.5 - dbm input 3rd order intercept point6 iip3_ 6 f1=frf, f2=frf+100khz, pin=-16dbm 0.0 +14.0 - dbm rf input vswr6 vswri6 - 1.7 2.3 rf output vswr6 vswro6 - 1.4 2.0
NJG1125PB5 - 6 - q terminal information no. symbol description 1 gnd ground terminal. (0v) 2 vinv inverter voltage supplies terminal. 3 vctl3 control voltage supply terminal. the high level voltage of this terminal selects high gain mode. the low level voltage of this terminal selects low gain mode. 4 rfout3 output terminal of 1.7ghz band. this terminal is also the power supply terminal of the lna, please use i nductor (l10) to connect power supply. 5 gnd ground terminal. (0v) 6 rfout2 output terminal of 2.1ghz band. this terminal is also the power supply terminal of the lna, please use i nductor (l6) to connect power supply. 7 gnd ground terminal. (0v) 8 rfout1 output terminal of 800mhz band. this terminal is also the power supply terminal of the lna, please use i nductor (l3) to connect power supply. 9 vctl2 10 vctl1 control voltage supply terminal. the frequency band (2ghz / 800mhz / 1.7ghz) selects by 2bit control signal . (please refer to truth table.) 11 gnd ground terminal. (0v) 12 rfin1 rf input terminal of 800mhz band. the rf signal is input through external matching circuit connected to this terminal. the dc blocking capacitor is not required. 13 gnd ground terminal. (0v) 14 rfin2 rf input terminal of 2.1ghz band. the rf signal is input through external matching circuit connected to this terminal. the dc blocking capacitor is not required. 15 gnd ground terminal. (0v) 16 rfin3 rf input terminal of 1.7ghz band. the rf signal is input through external matching circuit connected to this terminal. the dc blocking capacitor is not required. caution 1) ground terminal ( 1, 5, 7, 11, 13, 15 ) should be connected to t he ground plane as low inductance as possible.
NJG1125PB5 - 7 - q truth table control voltage operating state 2.1ghz band 800mhz band 1.7ghz band v ctl 1 (band sel1) v ctl 2 (band sel2) v ctl 3 (gain sel1) lna bypass lna bypass lna bypass l l l off on off on off on l l h on off off off off off h l l off on off on off on h l h off off on off off off l h l off on off on off on l h h off off off off on off h h l h h h don?t care ?l?=0 ~ 0.3v, ?h?=1.52 ~ v inv +0.3 v
NJG1125PB5 - 8 - q electrical characteristics (2.1ghz band high gain mode) condition ta=+25c, f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v -25 -20 -15 -10 -5 0 5 10 -40 -30 -20 -10 0 10 2.1ghz@high gain pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=-11.8dbm condition ta=+25c, f=2140mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 0 5 10 15 20 0 2 4 6 8 -40-30-20-10 0 10 2.1ghz@high gain gain, idd vs. pin gain (db) idd (ma) rf power (dbm) gain idd p-1db(in)=-11.8dbm condition ta=+25c, f=2~2.3ghz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2 2.05 2.1 2.15 2.2 2.25 2.3 2.1ghz@high gain nf vs. frequency nf (db) frequency (ghz) nf condition ta=+25c, f1=2140mhz, f2=f1+100khz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 2.1ghz@high gain pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 iip3=+1.2dbm
NJG1125PB5 - 9 - q electrical characteristics (2.1ghz band high gain mode) condition ta=+25c, f=2.1~2.2ghz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v -20 -18 -16 -14 -12 -10 -8 -6 2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.1ghz@high gain p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) condition ta=+25c, f1=2.1~2.2ghz, f2=f1+100khz, pin=-30dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 12 13 14 15 16 17 18 19 20 -2 -1 0 1 2 3 4 5 6 2.1 2.12 2.14 2.16 2.18 2.2 2.1ghz@high gain oip3,iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) iip3 oip3
NJG1125PB5 - 10 - q electrical characteristics (2.1ghz band high gain mode) condition ta=+25c, f=2140mhz, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 12 13 14 15 16 17 18 19 20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@high gain gain, nf vs. v dd , v inv nf (db) gain (db) v dd =v inv (v) nf gain condition ta=+25c, f1=2140mhz, f2=f1+100khz, pin=-30dbm, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@high gain oip3, iip3 vs. v dd , v inv oip3(dbm) iip3(dbm) oip3 iip3 v dd =v inv (v) condition ta=+25c, f=2140mhz, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v -22 -20 -18 -16 -14 -12 -10 -8 -6 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@high gain p-1db(in) vs. v dd , v inv p-1db(in)(dbm) p-1db(in) v dd =v inv (v) condition ta=+25c, f=2140mhz, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@high gain vswr vs. v dd , v inv vswri vswro vswri, vswro v dd =v inv (v)
NJG1125PB5 - 11 - q electrical characteristics (2.1ghz band high gain mode) condition ta=+25c, rf=off, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@high gain i dd vs. v dd , v inv i dd (ma) i dd v dd =v inv (v)
NJG1125PB5 - 12 - q electrical characteristics (2.1ghz band high gain mode) condition f=2140mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 12 13 14 15 16 17 18 19 20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50-25 0 255075100 2.1ghz@high gain gain, nf vs. temperature nf (db) gain (db) ambient temperature ( o c) gain nf condition f1=2140mhz, f2=f1+100khz, pin=-30dbm, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v -5.0 0.0 5.0 10.0 -50-25 0 255075100 5.0 10.0 15.0 20.0 2.1ghz@high gain oip3, iip3 vs. temperature iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 condition f=2140mhz, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v -22 -20 -18 -16 -14 -12 -10 -8 -6 -50-25 0 255075100 2.1ghz@high gain p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) condition f=2140mhz, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 2.1ghz@high gain vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c)
NJG1125PB5 - 13 - q electrical characteristics (2.1ghz band high gain mode) condition rf=off, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 2.1ghz@high gain i dd vs. temperature i dd (ma) ambient temperature ( o c) i dd
NJG1125PB5 - 14 - q electrical characteristics (2.1ghz band high gain mode) condition: ta=+25c, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v vswr zin, zout s11, s22 s 21, s12
NJG1125PB5 - 15 - q electrical characteristics (2.1ghz band high gain mode) condition: ta=+25c, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=1.85v s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz) k factor (f=50mhz~20ghz) 0 5 10 15 20 05101520 2.1ghz @high gain k factor vs. frequency k factor frequency(ghz)
NJG1125PB5 - 16 - q electrical characteristics (2.1ghz band low gain mode) condition ta=+25c, f=2140mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v condition ta=+25c, f=2140mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v -60 -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 20 2.1ghz@low gain pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=+11.0dbm -22 -20 -18 -16 -14 -12 -10 -8 -6 0 1 2 3 4 5 6 7 8 -40 -30 -20 -10 0 10 20 2.1ghz@low gain gain, idd vs. pin gain (db) idd (ua) rf power (dbm) gain idd p-1db(in)=+11.0dbm condition ta=+25c, f=2~2.3ghz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v 4 5 6 7 8 9 10 11 12 2 2.05 2.1 2.15 2.2 2.25 2.3 2.1ghz@low gain nf vs. frequency nf (db) frequency (ghz) nf ta=+25c, f1=2140mhz, f2=f1+100khz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 20 2.1ghz@low gain pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 iip3=+16.5dbm
NJG1125PB5 - 17 - q electrical characteristics (2.1ghz band low gain mode) condition ta=+25c, f=2.1~2.2ghz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v 2 4 6 8 10 12 14 16 18 2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.1ghz@low gain p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) condition ta=+25c, f1=2.1~2.2ghz, f2=f1+100khz, pin=-16dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v 2 3 4 5 6 7 8 9 10 14 15 16 17 18 19 20 21 22 2.1 2.12 2.14 2.16 2.18 2.2 2.1ghz@low gain oip3,iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) iip3 oip3
NJG1125PB5 - 18 - q electrical characteristics (2.1ghz band low gain mode) condition ta=+25c, f=2140mhz, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v condition ta=+25c, f1=2140mhz, f2=f1+100khz, pin=-16dbm, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v condition ta=+25c, f=2140mhz, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v condition ta=+25c, f=2140mhz, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v -10 -9 -8 -7 -6 -5 -4 -3 -2 2 3 4 5 6 7 8 9 10 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@low gain gain, nf vs. v dd , v inv nf (db) gain (db) v dd =v inv (v) nf gain 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@low gain oip3, iip3 vs. v dd , v inv oip3(dbm) iip3(dbm) v dd =v inv (v) oip3 iip3 4 6 8 10 12 14 16 18 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@low gain p-1db(in) vs. v dd , v inv p-1db(in)(dbm) v dd =v inv (v) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@low gain vswr vs. v dd , v inv vswri vswro vswri, vswro v dd =v inv (v)
NJG1125PB5 - 19 - q electrical characteristics (2.1ghz band low gain mode) condition ta=+25c, rf=off, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v condition ta=+25c, f1=2140mhz, f2=f1+2140.1mhz, pin=-16dbm, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v -80 -75 -70 -65 -60 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@low gain imd3 vs. v dd , v inv imd3(dbc) v dd =v inv (v) imd3 0 0.02 0.04 0.06 0.08 0.1 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.1ghz@low gain i dd vs. v dd , v inv v dd =v inv (v) i dd (ua) i dd
NJG1125PB5 - 20 - q electrical characteristics (2.1ghz band low gain mode) condition f=2140mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v -12 -11 -10 -9 -8 -7 -6 -5 -4 6 7 8 9 10 11 12 13 14 -50-25 0 255075100 nf (db) gain (db) ambient temperature ( o c) gain nf 2.1ghz@low gain gain, nf vs. temperature condition f1=2140mhz, f2=f1+100khz, pin=-16dbm, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=0v 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -50-25 0 255075100 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 2.1ghz@low gain oip3, iip3 vs. temperature iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 condition f=2140mhz, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=0v 4 6 8 10 12 14 16 18 -50-25 0 255075100 2.1ghz@low gain p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 2.1ghz@low gain vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c) condition f=2140mhz, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=0v
NJG1125PB5 - 21 - q electrical characteristics (2.1ghz band low gain mode) condition f1=2140mhz, f2=f1+100khz, pin=-16dbm, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=0v -90 -85 -80 -75 -70 -65 -60 -55 -50 -50-25 0 255075100 imd3(dbc) ambient temperature ( o c) 2.1ghz@low gain imd3 vs. temperature imd3 condition rf=off, v dd = v inv =2.7v v ctl 1=0v, v ctl 2=0v, v ctl 3=0v 0 0.1 0.2 0.3 0.4 0.5 -50-25 0 255075100 i dd (ua) ambient temperature ( o c) 2.1ghz@low gain i dd vs. temperature i dd
NJG1125PB5 - 22 - q electrical characteristics (2.1ghz band low gain mode) condition: ta=+25c, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v s11, s22 s21, s12 vswr zin, zout
NJG1125PB5 - 23 - q electrical characteristics (2.1ghz band low gain mode) condition: ta=+25c, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=0v, v ctl 3=0v k factor (f=50mhz~20ghz) 0 5 10 15 20 05101520 2.1ghz @low gain k factor vs. frequency k factor frequency(ghz) s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz)
NJG1125PB5 - 24 - q electrical characteristics (800mhz band high gain mode) condition ta=+25c, f=885mhz, v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v -25 -20 -15 -10 -5 0 5 10 -40 -30 -20 -10 0 10 800mhz@high gain pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=-12.0dbm condition ta=+25c, f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 4 6 8 10 12 14 16 18 20 0 2 4 6 8 -40-30-20-10 0 10 800mhz@high gain gain, idd vs. pin gain (db) idd (ma) rf power (dbm) gain idd p-1db(in)=-12.0dbm condition ta=+25c, f=750m~1ghz, v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 7508008509009501000 800mhz@high gain nf vs. frequency nf (db) frequency (mhz) nf condition ta=+25c, f1=885mhz, f2=f1+100khz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v -100 -80 -60 -40 -20 0 20 -40-30-20-10 0 10 800mhz@high gain pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 iip3=+2.0dbm
NJG1125PB5 - 25 - q electrical characteristics (800mhz band high gain mode) condition ta=+25c, f=869~900mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v -16 -14 -12 -10 -8 -6 -4 -2 860870880890900910 800mhz@high gain p-1db(in) vs. frequency p-1db(in) (dbm) frequency (mhz) p-1db(in) condition ta=+25c, f1=860~910mhz, f2=f1+100khz, pin=-30dbm, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 8 9 10 11 12 13 14 15 16 -3 -2 -1 0 1 2 3 4 5 860 870 880 890 900 910 800mhz@high gain oip3,iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (mhz) iip3 oip3
NJG1125PB5 - 26 - q electrical characteristics (800mhz band high gain mode) condition ta=+25c, f=885mhz, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 11 12 13 14 15 16 17 18 19 0.5 1 1.5 2 2.5 3 3.5 4 4.5 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@high gain gain, nf vs. v dd , v inv nf (db) gain (db) v dd =v inv (v) nf gain condition ta=+25c, f1=885mhz, f2=f1+100khz, pin=-30dbm, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@high gain oip3, iip3 vs. v dd , v inv oip3(dbm) iip3(dbm) v dd =v inv (v) oip3 iip3 condition ta=+25c, f=885mhz, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v -18 -16 -14 -12 -10 -8 -6 -4 -2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@high gain p-1db(in) vs. v dd , v inv p-1db(in)(dbm) v dd =v inv (v) p-1db(in) condition ta=+25c, f=885mhz, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@high gain vswr vs. v dd , v inv vswri vswro vswri, vswro v dd =v inv (v)
NJG1125PB5 - 27 - q electrical characteristics (800mhz band high gain mode) condition ta=+25c, rf=off v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@high gain i dd vs. v dd , v inv v dd =v inv (v) i dd (ma) i dd
NJG1125PB5 - 28 - q electrical characteristics (800mhz band high gain mode) condition f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 10 11 12 13 14 15 16 17 18 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50-25 0 255075100 800mhz@high gain gain, nf vs. temperature nf (db) gain (db) ambient temperature ( o c) gain nf condition f1=885mhz, f2=f1+100khz, pin=-30dbm, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 -50-25 0 255075100 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 800mhz@high gain oip3, iip3 vs. temperature iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 condition f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v -22 -20 -18 -16 -14 -12 -10 -8 -6 -50-25 0 255075100 800mhz@high gain p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) condition f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 800mhz@high gain vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c)
NJG1125PB5 - 29 - q electrical characteristics (800mhz band high gain mode) condition rf=off v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 800mhz@high gain i dd vs. temperature i dd (ma) ambient temperature ( o c) i dd
NJG1125PB5 - 30 - q electrical characteristics (800mhz band low gain mode) condition: ta=+25c, v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v s11, s22 s21, s12 vswr zin, zout
NJG1125PB5 - 31 - q electrical characteristics (800mhz band low gain mode) condition: ta=+25c, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=1.85v s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz) k factor (f=50mhz~20ghz) 0 5 10 15 20 05101520 800mhz @high gain k factor vs. frequency k factor frequency(ghz)
NJG1125PB5 - 32 - q electrical characteristics (800mhz band low gain mode) condition ta=+25c, f=885mhz, v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 20 800mhz@low gain pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=+9.0dbm condition ta=+25c, f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -14 -13 -12 -11 -10 -9 -8 -7 -6 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 -40 -30 -20 -10 0 10 20 800mhz@low gain gain, idd vs. pin gain (db) idd (ua) rf power (dbm) gain idd p-1db(in)=+9.0dbm condition ta=+25c, f=750~1ghz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 3 4 5 6 7 8 9 10 11 7508008509009501000 800mhz@low gain nf vs. frequency nf (db) frequency (mhz) nf condition ta=+25c, f1=885mhz, f2=f1+100khz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 20 800mhz@low gain pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 iip3=+12.2dbm
NJG1125PB5 - 33 - q electrical characteristics (800mhz band low gain mode) condition ta=+25c, f=869~900mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 0 2 4 6 8 10 12 14 16 860870880890900910 800mhz@low gain p-1db(in) vs. frequency p-1db(in) (dbm) frequency (mhz) p-1db(in) condition ta=+25c, f1=860~910mhz, f2=f1+100khz, pin=-20dbm, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 860 870 880 890 900 910 800mhz@low gain oip3,iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (mhz) iip3 oip3
NJG1125PB5 - 34 - q electrical characteristics (800mhz band low gain mode) condition ta=+25c, f=885mhz, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -8 -7 -6 -5 -4 -3 -2 -1 0 0 1 2 3 4 5 6 7 8 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@low gain gain, nf vs. v dd , v inv nf (db) gain (db) v dd =v inv (v) nf gain condition ta=+25c, f1=885mhz, f2=f1+100khz, pin=-20dbm, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@low gain oip3, iip3 vs. v dd , v inv oip3(dbm) iip3(dbm) v dd =v inv (v) oip3 iip3 condition ta=+25c, f=885mhz, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 2 4 6 8 10 12 14 16 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@low gain p-1db(in) vs. v dd , v inv p-1db(in)(dbm) v dd =v inv (v) p-1db(in) condition ta=+25c, f=885mhz, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@low gain vswr vs. v dd , v inv vswri vswro vswri, vswro v dd =v inv (v)
NJG1125PB5 - 35 - q electrical characteristics (800mhz band low gain mode) condition ta=+25c, f1=885mhz, f2=f1+100khz, pin=-20dbm, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -80 -75 -70 -65 -60 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@low gain imd3 vs. v dd , v inv imd3(dbc) v dd =v inv (v) imd3 condition ta=+25c, rf=off v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 0 0.01 0.02 0.03 0.04 0.05 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 800mhz@low gain i dd vs. v dd , v inv v dd =v inv (v) i dd (ua) i dd
NJG1125PB5 - 36 - q electrical characteristics (800mhz band low gain mode) condition f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -10 -8 -6 -4 -2 0 2 4 6 8 10 12 -50-25 0 255075100 nf (db) gain (db) ambient temperature ( o c) gain nf 800mhz@low gain gain, nf vs. temperature condition f1=885mhz, f2=f1+100khz, pin=-20dbm, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 -50-25 0 255075100 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 800mhz@low gain oip3, iip3 vs. temperature iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 condition f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 2 4 6 8 10 12 14 16 18 -50-25 0 255075100 800mhz@low gain p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 800mhz@low gain vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c) condition f=885mhz, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v
NJG1125PB5 - 37 - q electrical characteristics (800mhz band low gain mode) condition f1=885mhz, f2=f1+100khz, pin=-20dbm, v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v -75 -70 -65 -60 -55 -50-25 0 255075100 imd3(dbc) ambient temperature ( o c) 800mhz@low gain imd3 vs. temperature imd3 condition rf=off v dd = v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v 0 0.1 0.2 0.3 0.4 0.5 -50-25 0 255075100 i dd (ua) ambient temperature ( o c) 800mhz@low gain i dd vs. temperature i dd
NJG1125PB5 - 38 - q electrical characteristics (800mhz band low gain mode) condition: ta=+25c, v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v s11, s22 s21, s12 vswr zin, zout
NJG1125PB5 - 39 - q electrical characteristics (800mhz band low gain mode) condition: ta=+25c, v dd =v inv =2.7v, v ctl 1=1.85v, v ctl 2=0v, v ctl 3=0v s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz) k factor (f=50mhz~20ghz) 0 5 10 15 20 05101520 800mhz @low gain k factor vs. frequency k factor frequency(ghz)
NJG1125PB5 - 40 - q electrical characteristics (1.7ghz band high gain mode) condition ta=+25c, f=1860mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v -25 -20 -15 -10 -5 0 5 10 -40 -30 -20 -10 0 10 1.7ghz@high gain pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=-12.3dbm condition ta=+25c, f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 0 5 10 15 20 0 2 4 6 8 -40-30-20-10 0 10 1.7ghz@high gain gain, idd vs. pin gain (db) idd (ma) rf power (dbm) gain idd p-1db(in)=-12.3dbm condition ta=+25c, f=1.7~2ghz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 1.7 1.75 1.8 1.85 1.9 1.95 2 1.7ghz@high gain nf vs. frequency nf (db) frequency (ghz) nf condition ta=+25c, f1=1860mhz, f2=f1+100khz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 1.7ghz@high gain pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 iip3=+1.0dbm
NJG1125PB5 - 41 - q electrical characteristics (1.7ghz band high gain mode) condition ta=+25c, f=1.84~1.88ghz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v -20 -18 -16 -14 -12 -10 -8 -6 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.7ghz@high gain p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) condition ta=+25c, f1=1.8~1.90ghz, f2=f1+100khz, pin=-30dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 12 13 14 15 16 17 18 19 20 -2 -1 0 1 2 3 4 5 6 1.8 1.82 1.84 1.86 1.88 1.9 1.7ghz@high gain oip3,iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) iip3 oip3
NJG1125PB5 - 42 - q electrical characteristics (1.7ghz band high gain mode) condition ta=+25c, f=1860mhz, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 12 13 14 15 16 17 18 19 20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@high gain gain, nf vs. v dd , v inv nf (db) gain (db) v dd =v inv (v) nf gain condition ta=+25c, f1=1860mhz, f2=f1+100khz, pin=-30dbm, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@high gain oip3, iip3 vs. v dd , v inv oip3(dbm) iip3(dbm) v dd =v inv (v) oip3 iip3 condition ta=+25c, f=1860mhz, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v -22 -20 -18 -16 -14 -12 -10 -8 -6 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@high gain p-1db(in) vs. v dd , v inv p-1db(in)(dbm) v dd =v inv (v) p-1db(in) condition ta=+25c, f=1860mhz, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@high gain vswr vs. v dd , v inv vswri vswro vswri, vswro v dd =v inv (v)
NJG1125PB5 - 43 - q electrical characteristics (1.7ghz band high gain mode) condition ta=+25c, rf=off v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@high gain i dd vs. v dd , v inv v dd =v inv (v) i dd (ma) i dd
NJG1125PB5 - 44 - q electrical characteristics (1.7ghz band high gain mode) condition f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 12 13 14 15 16 17 18 19 20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50-25 0 255075100 1.7ghz@high gain gain, nf vs. temperature nf (db) gain (db) ambient temperature ( o c) gain nf condition f1=1860mhz, f2=f1+100khz, pin=-30dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 -50-25 0 255075100 10.0 12.0 14.0 16.0 18.0 20.0 22.0 1.7ghz@high gain oip3, iip3 vs. temperature iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 condition f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v -22 -20 -18 -16 -14 -12 -10 -8 -6 -50-25 0 255075100 1.7ghz@high gain p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) condition f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 1.7ghz@high gain vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c)
NJG1125PB5 - 45 - q electrical characteristics (1.7ghz band high gain mode) condition rf=off v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 1.7ghz@high gain i dd vs. temperature i dd (ma) ambient temperature ( o c) i dd
NJG1125PB5 - 46 - q electrical characteristics (1.7ghz band high gain mode) condition: ta=+25c, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v s11, s22 s21, s12 vswr zin, zout
NJG1125PB5 - 47 - q electrical characteristics (1.7ghz band high gain mode) condition: ta=+25c, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=1.85v s11, s22 (f=50mhz~20ghz) s21, s12 (f=50mhz~20ghz) k factor (f=50mhz~20ghz) 0 5 10 15 20 05101520 1.7ghz @high gain k factor vs. frequency k factor frequency(ghz)
NJG1125PB5 - 48 - q electrical characteristics (1.7ghz band low gain mode) condition ta=+25c, f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -60 -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 20 1.7ghz@low gain pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=+12.6dbm condition ta=+25c, f=1.7~2.0ghz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 4 6 8 10 12 14 1.7 1.75 1.8 1.85 1.9 1.95 2 1.7ghz@low gain nf vs. frequency nf (db) frequency (ghz) nf condition ta=+25c, f1=1860mhz, f2=f1+100khz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 20 1.7ghz@low gain pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 iip3=+14.5dbm condition ta=+25c, f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -18 -16 -14 -12 -10 -8 -6 0 0.5 1 1.5 2 2.5 3 -40 -30 -20 -10 0 10 20 1.7ghz@low gain gain, idd vs. pin gain (db) idd (ua) rf power (dbm) gain idd p-1db(in)=+12.6dbm
NJG1125PB5 - 49 - q electrical characteristics (1.7ghz band low gain mode) condition ta=+25c, f=1.84~1.88ghz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 2 4 6 8 10 12 14 16 18 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.7ghz@low gain p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) condition ta=+25c, f1=1.8~1.9ghz, f2=f1+100khz, pin=-16dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 1 2 3 4 5 6 7 8 9 14 15 16 17 18 19 20 21 22 1.8 1.82 1.84 1.86 1.88 1.9 1.7ghz@low gain oip3,iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) iip3 oip3
NJG1125PB5 - 50 - q electrical characteristics (1.7ghz band low gain mode) condition ta=+25c, f=1860mhz, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -11 -10 -9 -8 -7 -6 -5 -4 -3 3 4 5 6 7 8 9 10 11 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@low gain gain, nf vs. v dd , v inv nf (db) gain (db) v dd =v inv (v) nf gain condition ta=+25c, f1=1860mhz, f2=f1+100khz, pin=-16dbm, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@low gain oip3, iip3 vs. v dd , v inv oip3(dbm) iip3(dbm) v dd =v inv (v) oip3 iip3 condition ta=+25c, f=1860mhz, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 4 6 8 10 12 14 16 18 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@low gain p-1db(in) vs. v dd , v inv p-1db(in)(dbm) v dd =v inv (v) p-1db(in) condition ta=+25c, f=1860mhz, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 0 0.5 1 1.5 2 2.5 3 3.5 4 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@low gain vswr vs. v dd , v inv vswri vswro vswri, vswro v dd =v inv (v)
NJG1125PB5 - 51 - q electrical characteristics (1.7ghz band low gain mode) condition ta=+25c, f1=1860mhz, f2=f1+100khz, pin=-16dbm, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -80 -75 -70 -65 -60 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@low gain imd3 vs. v dd , v inv imd3(dbc) v dd =v inv (v) imd3 condition ta=+25c, rf=off, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 0 0.01 0.02 0.03 0.04 0.05 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 1.7ghz@low gain i dd vs. v dd , v inv v dd =v inv (v) i dd (ua) i dd
NJG1125PB5 - 52 - q electrical characteristics (1.7ghz band low gain mode) condition f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 -50-25 0 255075100 nf (db) gain (db) ambient temperature ( o c) gain nf 1.7ghz@low gain gain, nf vs. temperature condition f1=1860mhz, f2=f1+100khz, pin=-16dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 -50-25 0 255075100 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 1.7ghz@low gain oip3, iip3 vs. temperature iip3 (dbm) oip3 (dbm) ambient temperature ( o c) oip3 iip3 condition f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 4 6 8 10 12 14 16 18 -50-25 0 255075100 1.7ghz@low gain p-1db(in) vs. temperature p-1db(in) (dbm) ambient temperature ( o c) p-1db(in) condition f=1860mhz, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100 1.7ghz@low gain vswr vs. temperature vswri vswro vswri, vswro ambient temperature ( o c)
NJG1125PB5 - 53 - q electrical characteristics (1.7ghz band low gain mode) condition f1=1860mhz, f2=f1+100khz, pin=-16dbm, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v -75 -70 -65 -60 -55 -50-25 0 255075100 imd3(dbc) ambient temperature ( o c) 1.7ghz@low gain imd3 vs. temperature imd3 condition rf=off v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v 0 0.1 0.2 0.3 0.4 0.5 -50-25 0 255075100 i dd (ua) ambient temperature ( o c) 1.7ghz@low gain i dd vs. temperature i dd
NJG1125PB5 - 54 - q electrical characteristics (1.7ghz band low gain mode) condition: ta=+25c, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v s11, s22 s21, s12 vswr zin, zout
NJG1125PB5 - 55 - q electrical characteristics (1.7ghz band low gain mode) condition: ta=+25c, v dd = v inv =2.7v, v ctl 1=0v, v ctl 2=1.85v, v ctl 3=0v s11, s22 ( f=50mhz~20ghz ) s21, s12 (f=50mhz~20ghz) k factor ( f=50mhz~20ghz ) 0 5 10 15 20 05101520 1.7ghz @low gain k factor vs. frequency k factor frequency(ghz)
NJG1125PB5 - 56 - q test circuit parts id comment l1~ l11 murata (lqp03t) 0603size c1~c6 murata (grm03) 0603size precautions 1) please locate c2, c6 close to l3. 2) please locate c4 close to l6, l10. 3) ground terminal should be connected to the ground plane as low inductance as possible. 6 7 8 10 11 12 13 14 15 123 rfin3 rfin2 gnd gnd rfout2 gnd gnd gnd vinv vc tl 1 vc tl 3 vc tl 2 logic circuit 4 9 rfout3 5 16 rfin1 rfout1 1.7ghz band bias circuit bias circuit bias circuit gnd 2.1ghz band 800mhz band rf out3 (1.7ghz) rf out2 (2.1ghz) rf out1 (800mhz) v dd =2.7v v inv =2.7v v ctl 3=0v or 1.85v (rx att) v ctl 1=0v or 1.85v (band select1) v ctl 2=0v or 1.85v (band select2) rf in3 (1.7ghz) rf in2 (2.1ghz) rf in1 (800mhz) l3 1.5nh l4 5.6nh l7 1.2nh l8 3.9nh l11 6.8nh l9 12nh l10 12nh l5 2.2nh l6 1.5nh l1 2.7nh l2 2.2nh c1 3pf c2 1000pf c3 3pf c5 1000pf c4 2pf c6 1000pf (top view) parts list
NJG1125PB5 - 57 - q recommended design pcb (fr-4) t=0.2mm microstrip line width=0.4mm (z 0 =50ohm) pcb size=35.4mm x 17.0mm (top view) rf in2 (2.1ghz) rf in1 (800mhz) rf in3 (1.7ghz) rf out3 (1.7ghz) rf out1 (800mhz) rf out2 (2.1ghz) v dd v dd v inv v ctl 1 v ctl 2 v ctl 3 l3 l4 c1 c2 l7 l8 c3 l11 c5 c4 l9 l10 l6 l5 l2 l1 c6
NJG1125PB5 - 58 - q measurement block diagram dut network analyzer vdd=2.9v port1 rf output rf input port2 v dd =2.7v s parameter measurement block diagram dut vdd=2.9v rfoutput rf input signal generator spectrum analyzer center=865.05hz span=400khz rbw=3khz vbw=100hz signal generator freq2=865.1mhz power comb. variable attenuator freq1=865.0mhz isolator isolator v dd =2.7v freq1 freq2 if and im3 measurement for iip3 6db dut nf meter vdd=2.9v n.s. output rf output rf input input noise source v dd =2.7v noise figure measurement block diagram a nalyzer
NJG1125PB5 - 59 - q package outline (ffp16-b5) (top view) (side view) (bottom view) 1pin index unit : mm pcb : ceramic over coat : epoxy resin terminal treat : au weight : 7mg cautions on using this product this product contains gallium-arsenide (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? to waste this p roduct, p lease obe y the relatin g law of y our countr y . this product may be damaged with electric static discharge (esd) or spike voltage. please handle with care to avoid these dama g es. [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

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